In response to the urgent climate crisis and the surging global energy demands, governments and industries are aggressively pursuing climate goals to reduce environmental impact and ensure a sustainable future. A pivotal element in these efforts is the transition to electrification and renewable energy sources. Onsemi’s introduction of its latest silicon carbide technology platform, EliteSiC M3e MOSFETs, marks a significant advancement in this direction. This new technology, designed to increase power density and reduce carbon emissions, represents a substantial leap in power semiconductor innovation. The EliteSiC M3e MOSFETs are crucial for next-generation electrical systems, offering higher switching frequencies and voltages with minimized power conversion losses, essential for applications like electric vehicle powertrains, DC fast chargers, solar inverters, and energy storage solutions. The platform’s ability to improve efficiency and reduce costs will play a critical role in the global transition to electrification and the fight against climate change. Onsemi’s EliteSiC M3e MOSFETs deliver a remarkable reduction in conduction and switching losses, enhancing the performance and reliability of power systems. The technology offers the industry’s lowest specific on-resistance and short circuit capability, making it ideal for the traction inverter market. This allows for more output power and cost savings by designing smaller, lighter, and more reliable systems. Onsemi’s extensive portfolio of power technologies, including gate drivers and DC-DC converters, complements the EliteSiC M3e platform, enabling advanced features and lowering system costs. The company’s innovative approach, rooted in decades of experience, focuses on maximizing power density and efficiency through optimized cell structures and advanced packaging techniques. By accelerating its silicon carbide roadmap, onsemi aims to meet the growing global energy demands and contribute to a sustainable, electrified future.
